Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy
Author:
Affiliation:
1. Department of Electronics, Nagoya University, Nagoya, Japan
2. Mitsubishi Chemical Corporation, Ushiku, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/16/10508280/10474297.pdf?arnumber=10474297
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1. High-temperature electronics - a role for wide bandgap semiconductors?
2. Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation
3. GaN-Based RF Power Devices and Amplifiers
4. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
5. High temperature performance of AlGaN/GaN HEMTs on Si substrates
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