Author:
Tan W.S.,Uren M.J.,Fry P.W.,Houston P.A.,Balmer R.S.,Martin T.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. AlGaN/GaN HEMTs on Si substrate with 7W/mm output power density at 10GHz;Dumka;Electron Lett,2004
2. High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates;Arulkumaran;Appl Phys Lett,2002
3. High temperature performance of AlGaN/GaN HFET’s on SiC substrates;Gaska;IEEE Electron Dev Lett,1997
4. Uren MJ, Nash KJ, Glasper JL, Balmer RS, Martin T, Morvan E, et al. Punch-through in short-channel AlGaN/GaN HFETs. IEEE Electron Dev Lett, in press.
5. Importance of source and drain resistance to the maximum ft of millimetre-wave MODFETs;Tasker;IEEE Electron Dev Lett,1989
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