Characterization of trap evolution in GaN-based HEMTs under pulsed stress
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Published:2024-01
Issue:
Volume:152
Page:115298
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ISSN:0026-2714
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Container-title:Microelectronics Reliability
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language:en
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Short-container-title:Microelectronics Reliability
Author:
Wen Qian,Zheng Xiang,Meng Xianwei,Feng Shiwei,Xu Pu,Zhang Yamin
Funder
National Natural Science Foundation of China
Natural Science Foundation of Beijing Municipality
National Key Research and Development Program of China
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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4. Effect of temperature cycling, high temperature storage and steady-state operation life test on reliability of GaN HEMTs;Mao,2021
5. Reliability of GaN HEMTs: current degradation in GaN/AlGaN/AlN/GaN HEMT;Padmanabhan,2012