Affiliation:
1. Department of Electrical and Electronic Engineering Yamaguchi University 2 -16-1 Tokiwadai Ube Yamaguchi 755-8611 Japan
2. Japan Fine Ceramics Center 2-4-1 Mutsuno Atsuta Nagoya Aichi 456-0023 Japan
3. Institute of Materials and Systems for Sustainability (IMaSS) Nagoya University Furocho Chikusa Nagoya Aichi 464-8601 Japan
Abstract
AlN‐based field‐effect transistors (FETs) enable high‐breakdown voltage, high drain current, and high‐temperature operation. To realize high‐frequency devices, N‐polar AlGaN/AlN heterostructure FETs are focused on. N‐polar Al0.1Ga0.9N/Al0.9Ga0.1N/AlN FET is fabricated using metal–organic vapor‐phase epitaxy, and its electrical characteristics are evaluated. An N‐polar AlN layer is grown on a sapphire substrate with a misorientation angle of 2.0° toward m‐axis, on which a 20 nm thick Al0.9Ga0.1N base layer and a 20 nm Al0.1Ga0.9N channel layer are grown. The static FET operation is confirmed to exhibit an n‐channel and pinch‐off. Normally, during operation with a turn‐on voltage of −3.2 V, a high operating breakdown voltage of 620 V and high operating temperature of 280 °C are also confirmed.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials