Properties of carbon-doped GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1345816
Reference10 articles.
1. Deep‐center hopping conduction in GaN
2. Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
3. Growth of high-performance GaN modulation-doped field-effect transistors by ammonia-molecular-beam epitaxy
4. The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN
5. The role of dislocation scattering in n-type GaN films
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