Effects of adding methane on the growth and electrical properties of GaN in oxide vapor phase epitaxy

Abstract

GaN grown via oxide vapor phase epitaxy (OVPE-GaN) can produce free-standing substrates with ultra-low resistivity because of the high doping concentration of oxygen. The bulk growth of OVPE-GaN is hindered by polycrystals generated during long-term growth. We have previously reported that thicker films can be grown by reducing the partial pressure of water vapor in the growth atmosphere with CH4. However, as CH4 is a dopant of carbon, a compensating acceptor, its addition may increase electrical resistance. In this study, we further investigated the effect of reducing water vapor partial pressure on polycrystals by combining Ga2O production (reaction of Ga and water vapor: a Ga–H2O system), which can reduce water vapor, with CH4 addition. However, CH4 addition to the Ga–H2O system increased polycrystal generation, possibly owing to the thermal decomposition of excess CH4. The properties of OVPE-GaN with CH4 addition were also evaluated. Although the CH4 addition resulted in high carbon doping, the carbon-doped OVPE-GaN maintained low resistivity. This is because the OVPE method involves three-dimensional growth with growth pits, and the growth pits leave behind low-resistivity high-oxygen-concentration regions. As the resistivity remains low even when CH4 is added in the OVPE method, both polycrystallization suppression and low resistivity can be achieved by selecting an appropriate CH4 flow rate.