Recent progress of GaN power devices for automotive applications
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=10/a=100210/pdf
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1. Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device
2. A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
3. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
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