GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching-Reference-Cited by-同舟云学术

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GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Published:2008-02-15 Issue: Volume:1 Page:021104
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Expr.

Author:

Kodama Masahito,Sugimoto Masahiro,Hayashi Eiko,Soejima Narumasa,Ishiguro Osamu,Kanechika Masakazu,Itoh Kenji,Ueda Hiroyuki,Uesugi Tsutomu,Kachi Tetsu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/1/i=2/a=021104/pdf

Reference6 articles.

1. Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

2. High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact

3. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

4. High-voltage normally off GaN MOSFETs on sapphire substrates

5. GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility

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1. Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer;Journal of Applied Physics;2024-08-01

2. Enhancement of device performance in β-Ga2O3 Schottky barrier diodes with tetramethylammonium hydroxide treatment;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2024-07

3. Wafer-scale vertical GaN nanorod arrays with nonpolar facets using TMAH wet etching;Applied Surface Science;2024-07

4. SiO₂‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors;physica status solidi (a);2024-07

5. Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs;Electronics;2024-06-15

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