Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20050161?crawler=true&mimetype=application/pdf
Reference11 articles.
1. Microwave electronics device applications of AlGaN/GaN heterostructures
2. Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
3. Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
4. High transconductance enhancement-mode AlGaN∕GaN HEMTs on SiC substrate
5. Laser processing for enhanced performance thin film electroluminescent devices
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