High transconductance enhancement-mode AlGaN∕GaN HEMTs on SiC substrate
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20031124?crawler=true&mimetype=application/pdf
Reference7 articles.
1. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
2. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
3. GaN/AlGaN high electron mobility transistors with f of 110 GHz
4. Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
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