Laser processing for enhanced performance thin film electroluminescent devices-Reference-Cited by-同舟云学术

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Laser processing for enhanced performance thin film electroluminescent devices

Published:2000 Issue:8 Volume:36 Page:754
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Cranton W.M.,Mastio E.A.,Thomas C.B.,Tsakonas C.,Stevens R.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20000568?crawler=true&mimetype=application/pdf

Reference9 articles.

1. Improving the efficiency of thin film electroluminescent displays

2. Cranton, W.M.: ‘Growth and characterisation of ZnS:Mn based TFEL devices’, 1995, PhD, University of Bradford

3. ‘Laser annealing for high intensity flat screen displays’, Annual Report 1996/1997, Rutherford Appleton Laboratory Central Laser Facility, 1997 p. 147–148

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser annealing of thin film electroluminescent devices deposited at a high rate using high target utilization sputtering;Semiconductor Science and Technology;2011-03-08

2. Recessed-gate enhancement-mode GaN HEMT with high threshold voltage;Electronics Letters;2005

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