Wafer-scale vertical GaN nanorod arrays with nonpolar facets using TMAH wet etching-Reference-Cited by-同舟云学术

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Wafer-scale vertical GaN nanorod arrays with nonpolar facets using TMAH wet etching

Published:2024-07 Issue: Volume:661 Page:160040
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ryu Hyesu,Choi Hak-Jong,Kulkarni Mandar,Rho Hokyun,Lim Hyungjun,Ryu Sang-Wan,Ha Jun-Seok,Lee Sang Hyun

Publisher

Elsevier BV

Reference48 articles.

1. Gallium nitride-based complementary logic integrated circuits;Zheng;Nat. Electron.,2021

2. Gallium nitride catalyzed the direct hydrogenation of carbon dioxide to dimethyl ether as primary product;Liu;Nat. Commun.,2021

3. Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle;Jeong;Sci. Adv.,2020

4. The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structure;Bykhovski;J. Appl. Phys.,1993

5. Spontaneous polarization and piezoelectric constants of III-V nitrides;Bernardini;Phys. Rev. B,1997

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1. Fabrication of three-dimensional microstructures on GaN surfaces through the integration of femtosecond laser ablation and ICP etching;Optics Communications;2024-10

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