Gallium nitride-based complementary logic integrated circuits
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials
Link
https://www.nature.com/articles/s41928-021-00611-y.pdf
Reference55 articles.
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2. Asif Khan, M., Bhattarai, A., Kuznia, J. N. & Olson, D. T. High electron mobility transistor based on a GaN-AlxGa1–xN heterojunction. Appl. Phys. Lett. 63, 1214 (1993).
3. Ambacher, O. et al. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J. Appl. Phys. 85, 3222 (1999).
4. Smorchkova, I. P. et al. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy. J. Appl. Phys. 86, 4520 (1999).
5. Mishra, U. K., Shen, L., Kazior, T. E. & Wu, Y. F. GaN-based RF power devices and amplifiers. Proc. IEEE 96, 287–305 (2008).
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