Enhancement of device performance in β-Ga2O3 Schottky barrier diodes with tetramethylammonium hydroxide treatment-Reference-Cited by-同舟云学术

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Enhancement of device performance in β-Ga2O3 Schottky barrier diodes with tetramethylammonium hydroxide treatment

Published:2024-07 Issue: Volume:693 Page:134079
ISSN:0927-7757
Container-title:Colloids and Surfaces A: Physicochemical and Engineering Aspects
language:en
Short-container-title:Colloids and Surfaces A: Physicochemical and Engineering Aspects

Author:

Janardhanam V.,Kim Jong-Hee,Jyothi I.,Jung Hyun-Ho,Kim Seong-Jong,Shim Kyu-Hwan,Choi Chel-Jong^ORCID

Funder

Jeonbuk National University

Publisher

Elsevier BV

Reference50 articles.

1. Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers;Zatsepin;Superlattices Microstruct.,2018

2. Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers;Li;Appl. Phys. Lett.,2022

3. Low temperature modeling of Ni/β-Ga2O3 Schottky barrier diode;Labed;ACS Appl. Electron. Mater.,2021

4. Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3;Zhang;J. Appl. Phys.,2017

5. Rapid thermal-annealing-induced microstructural evolution of Au/Ni/β-Ga2O3 Schottky diodes correlated with their electrical properties;Janardhanam;J. Alloy Compd.,2022

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