Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124252
Reference17 articles.
1. AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs)
2. Microwave performance of AlGaN/GaN inverted MODFET's
3. Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency
4. Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz
5. High Al-content AlGaN/GaN MODFETs for ultrahigh performance
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