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Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency

  • Published:1996 Issue:4 Volume:32 Page:357
  • ISSN:0013-5194
  • Container-title:Electronics Letters
  • language:en
  • Short-container-title:Electron. Lett.

Author:

Khan M.A.,Chen Q.,Shur M.S.,Dermott B.T.,Higgins J.A.,Burm J.,Schaff W.,Eastman L.F.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

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