Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities

Abstract

Abstract With the sub-bandgap optical excitation, thermal dynamics of holes among multiple levels in n-type GaN epilayers with different dopants of Si, Ge and C are investigated via measuring and modeling variable-temperature yellow luminescence (YL) band of the samples. In sharp contrast to the case of above-bandgap optical excitation, the variable-temperature YL band of all the studied GaN samples including unintentionally-doped sample exhibit unusual negative thermal quenching (NTQ) behavior, suggesting a possible physical mechanism, namely thermally induced migration of holes from shallower levels to the luminescent deep level. By considering the possible presence of multiple hole levels in the doped GaN samples, a phenomenological model is developed for the thermal transfer of holes among the multi-levels and the interpretation of the observed NTQ phenomenon of the YL band. Different activation energies of 347.9, 520.8 and 348.5 meV are obtained for the Ge-doped, high C-containing, and Si-doped GaN samples, respectively. The results reveal the existence of multiple hole defect levels in the n-type GaN. Possible microstructural origins causing these different hole levels are further argued. The study may shed some light on the nature of various defect complexes in the technologically important GaN epilayers. Combined microstructural and optical investigations need to be further done for elucidating various optically- and electrically-active defect complexes in GaN.