Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1592306
Reference24 articles.
1. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
2. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
3. Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition
4. Reduction of stress at the initial stages of GaN growth on Si(111)
5. Thermal stress in GaN epitaxial layers grown on sapphire substrates
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