Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1415043
Reference11 articles.
1. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy
2. Ultraviolet and violet GaN light emitting diodes on silicon
3. Green electroluminescent (Ga, In, Al)N LEDs grown on Si (111)
4. High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy
5. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
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