Thermal stress in GaN epitaxial layers grown on sapphire substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359465
Reference23 articles.
1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
2. Electrical properties of n-type vapor-grown gallium nitride
3. Effect of growth parameters on the properties of GaN : Zn epilayers
4. The Use of Metalorganics in the Preparation of Semiconductor Materials
5. Growth of GaN Thin‐Films from Triethylgallium Monamine
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