Piezo-phototronic effect modulated performances of guest-substrate integrated p–i–n GaN ultraviolet detectors-Reference-Cited by-同舟云学术

Piezo-phototronic effect modulated performances of guest-substrate integrated p–i–n GaN ultraviolet detectors

Published:2024 Issue:32 Volume:12 Page:12615-12622
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Peishan¹,Yang Yuqing¹²,Dong ZeXin¹,Huang Xiaoyue¹,Wang Yihan¹,Chang Huan¹,Song Zihao¹,Peng Zhenjian³,Zhang Kang⁴,Wang Xingfu¹^ORCID

Affiliation:

1. School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China

2. School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

3. Guangdong Zhongshan Supervision Testing Institute of Quality & Metrology, Zhongshan City, Guangdong Province, China

4. Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, China

Abstract

High quality freestanding p–i–n GaN UV photodiodes were successfully fabricated on flexible mica by using selective electrochemical (EC) etching and an In–Au (50 nm/50 nm) bonding layer, which is convenient and the thermal damage is low.

Funder

Basic and Applied Basic Research Foundation of Guangdong Province

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC02120G

Reference41 articles.

1. Woven Fibrous Photodetectors for Scalable UV Optical Communication Device

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4. A high responsivity and controllable recovery ultraviolet detector based on a WO3 gate AlGaN/GaN heterostructure with an integrated micro-heater

5. Low temperature-processed ZnO thin films for p–n junction-based visible-blind ultraviolet photodetectors