A high responsivity and controllable recovery ultraviolet detector based on a WO3 gate AlGaN/GaN heterostructure with an integrated micro-heater-Reference-Cited by-同舟云学术

A high responsivity and controllable recovery ultraviolet detector based on a WO3 gate AlGaN/GaN heterostructure with an integrated micro-heater

Published:2020 Issue:16 Volume:8 Page:5409-5416
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Sun Jianwen¹²³⁴^ORCID,Zhang Shuo⁵⁶⁷⁸⁹,Zhan Teng⁵⁶⁷⁸⁹^ORCID,Liu Zewen¹⁰¹¹⁸⁹,Wang Junxi⁵⁶⁷⁸⁹,Yi Xiaoyan⁵⁶⁷⁸⁹,Li Jinmin⁵⁶⁷⁸⁹,Sarro Pasqualina M.¹²³⁴,Zhang Guoqi¹²³⁴¹²

Affiliation:

1. Department of Microelectronics

2. Delft University of Technology

3. 2628 CD Delft

4. The Netherlands

5. Research and Development Center for Solid State Lighting

6. Institute of Semiconductors

7. Chinese Academy of Sciences

8. Beijing

9. China

10. Institute of Microelectronic

11. Tsinghua University

12. Shenzhen Institute of Wide-Bandgap Semiconductor

Abstract

A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO₃) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time.

Funder

National Basic Research Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC00553C

Reference65 articles.

1. Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (λ< 200 nm) Photodetector with Fast-Response Speed Based on High-Quality AlN Micro/Nanowire

2. Semiconductor ultraviolet detectors

3. Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review

4. Gallium oxide solar-blind ultraviolet photodetectors: a review

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