Ultrahigh Bipolar Photoresponse in a Self-Powered Ultraviolet Photodetector Based on GaN and In/Sn-Doped Ga<sub>2</sub>O<sub>3</sub> Nanowires pn junction-Reference-Cited by-同舟云学术

Ultrahigh Bipolar Photoresponse in a Self-Powered Ultraviolet Photodetector Based on GaN and In/Sn-Doped Ga₂O₃ Nanowires pn junction

Published:2024-06-27 Issue:27 Volume:16 Page:35303-35314
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Xu Wei¹²³,Li Bei¹^ORCID,Wu Yutong¹,Dong Zhiyu¹,Zhang Kun¹,Wang Qingshan⁴,Feng Shuanglong¹²^ORCID,Lu Wenqiang¹²^ORCID

Affiliation:

1. Chongqing Key Laboratory of Multi-Scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China

2. Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China

3. University of Chinese Academy of Sciences, Beijing 100049, China

4. Chongqing Public Security Bureau, Chongqing 400000, China

Funder

Chongqing Talent, Innovation and Entrepreneurship Leading Talent Project

Chongqing Natural Science Fund Innovation for Development Joint Fund Project

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c04812

Reference57 articles.

1. A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

2. Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

3. Graphene-β -Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application

4. High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication

5. Ultrahigh Photoresponsivity of W/Graphene/β-Ga₂O₃ Schottky Barrier Deep Ultraviolet Photodiodes