High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication-Reference-Cited by-同舟云学术

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High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication

Published:2018-06-13 Issue:26 Volume:10 Page:22419-22426
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lin Richeng¹,Zheng Wei¹^ORCID,Zhang Dan¹,Zhang Zhaojun¹,Liao Qixian¹,Yang Lu¹,Huang Feng¹^ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, P. R. China

Funder

Guangzhou Science and Technology Program key projects

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b05336

Reference41 articles.

1. Semiconductor ultraviolet detectors

2. New concept ultraviolet photodetectors

3. Solar-Blind Avalanche Photodetector Based On Single ZnO–Ga2O3 Core–Shell Microwire

4. Vacuum-Ultraviolet Photovoltaic Detector

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