Growth of high-quality GaN on Si(111) substrate by ultrahigh vacuum chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1371539
Reference21 articles.
1. High quality GaN–InGaN heterostructures grown on (111) silicon substrates
2. Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer
3. Epitaxial growth of wurtzite GaN on Si(111) by a vacuum reactive evaporation
4. GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy
5. Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer
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