A high output power and low phase noise GaN HEMT VCO with array of switchable inductors-Reference-Cited by-同舟云学术

A high output power and low phase noise GaN HEMT VCO with array of switchable inductors

Published:2017-03-27 Issue:11 Volume:45 Page:1621-1636
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int. J. Circ. Theor. Appl.

Author:

Kao Hsuan-Ling¹²^ORCID,Yeh Chih-Sheng¹,Chiu Hsien-Chin¹,Cho Cheng-Lin³,Cheng Chun-Hu⁴

Affiliation:

1. Department of Electronic Engineering; Chang Gung University; Tao-Yuan Taiwan

2. Department of Dermatology; Chang Gung Memorial Hospital; Linkou Branches Taiwan

3. Department of Engineering and System Science; National Tsing Hua University; Hsinchu Taiwan

4. Department of Mechatronic Engineering; National Taiwan Normal University; Taipei Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cta.2343/fullpdf

Reference33 articles.

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3. A V-band monolithic AlGaN/GaN VCO;Lan;IEEE Microwave and Wireless Components Letters,2008

4. Signal generation, control, and FREQUENCY CONVERSION AlGaN/GaN HEMT MMICs;Kaper;IEEE Transactions on Microwave Theory and Techniques,2005

5. Nakasha Y Masuda S Makiyama K Ohki T Kanamura M Okamoto N Tajima T Seino T Shigematsu H Imanishi K Kikkawa T Joshin K Hara N E-band 85-mW oscillator and 1.3-W amplifier ICs using 0.12 μm GaN HEMTs for millimeter-wave transceivers

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