High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH 3 pulse flow cleaning process-Reference-Cited by-同舟云学术

High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH 3 pulse flow cleaning process

Published:2017-04 Issue: Volume:104 Page:112-117
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Ji Panfeng,Yang Xuelin,Feng Yuxia,Cheng Jianpeng,Zhang Jie,Hu Anqi,Song Chunyan,Wu Shan,Shen Jianfei,Tang Jun,Tao Chun,Pan Yaobo,Wang Xinqiang,Shen Bo

Funder

National Natural Science Foundation of China

National Key Research and Development Program

National High-Tech Research and Development Program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Epitaxial challenges of GaN on silicon

2. Prospects of III-nitride optoelectronics grown on Si

3. Sixteen years GaN on Si

4. Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

5. Bulk synthesis of silicon nanowires using a low-temperature vapor–liquid–solid method

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