Epitaxial growth of wurtzite GaN on Si(111) by a vacuum reactive evaporation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372264
Reference18 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Growth and mosaic model of GaN grown directly on 6H–SiC(0001) by direct current plasma assisted molecular beam epitaxy
3. Recombination dynamics in GaN
4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
5. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
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1. Low-temperature synthesis of GaN film from aqueous solution by electrodeposition;Journal of Applied Electrochemistry;2019-07-11
2. The Research about the III-Nitride Compounds Epitaxially Grown on Si Substrate;Advanced Materials Research;2011-11
3. Characterization of GaN p-n Junction Grown on Si (111) Substrate by Plasma-Assisted Molecular Beam Epitaxy;Advanced Materials Research;2011-10
4. One-step synthesis of GaN thin films on Si substrate by a convenient electrochemical technique at low temperature for different durations;Journal of Crystal Growth;2011-06
5. Temperature-dependent photoluminescence of GaN grown on β-Si3N4/Si (111) by plasma-assisted MBE;Journal of Luminescence;2011-04
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