Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123512
Reference9 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. High quality GaN–InGaN heterostructures grown on (111) silicon substrates
3. Ultraviolet and violet GaN light emitting diodes on silicon
4. Low-temperature nitridation of silicon surface using NH3-decomposed species in a catalytic chemical vapor deposition system
5. Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer
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