Reduction of stress at the initial stages of GaN growth on Si(111)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1534940
Reference18 articles.
1. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
2. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
3. High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer
4. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
5. In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers
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