First-principles study on the electronic and optical properties of pn-type SnO/MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si34.svg" display="inline" id="d1e464"><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math> heterojunction tuned by various intrinsic vacancy defects and layer thicknesses-Reference-Cited by-同舟云学术

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First-principles study on the electronic and optical properties of pn-type SnO/MoS2 heterojunction tuned by various intrinsic vacancy defects and layer thicknesses

Published:2024-07 Issue: Volume:177 Page:108362
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Fan Di,Wang Jia-chen,Xue Feng-ning,Liu Ting,Lu Yong,Zhang Ji-cai

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference55 articles.

1. Two-dimensional atomic crystals;Novoselov;Proc. Natl. Acad. Sci.,2005

2. Recent advances in ultrathin two-dimensional nanomaterials;Tan;Chem. Rev.,2017

3. Recent development on MoS2-based photocatalysis: A review;Li;J. Photochem. Photobiol. C: Photochem. Rev.,2018

4. Phonon-assisted ultrafast charge transfer at van der Waals heterostructure interface;Zheng;Nano Lett.,2017

5. Novel electronic and optical properties of ultrathin silicene/arsenene heterostructures and electric field effects;Shu;Phys. Chem. Chem. Phys.,2017

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