Deep‐center hopping conduction in GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363128
Reference23 articles.
1. GaN, AlN, and InN: A review
2. The effect of organometallic vapor phase epitaxial growth conditions on wurtzite GaN electron transport properties
3. Electron transport mechanism in gallium nitride
4. N vacancies in AlxGa1−xN
5. Native defects in gallium nitride
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