Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector With High Responsivity and High Detectivity
Author:
Affiliation:
1. School of Microelectronics, Hefei University of Technology, Hefei, China
2. Guangdong Institute of Semiconductor Micro-Nano Manufacturing Technology, Foshan, China
Funder
National Natural Science Foundation of China
Key Research and Development Plan of Anhui Province
Natural Science Foundation of Anhui Province
Fundamental Research Funds for the Central Universities
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10109212/10083134.pdf?arnumber=10083134
Reference32 articles.
1. Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates
2. Enhanced Responsivity of GaN Metal–Semiconductor–Metal (MSM) Photodetectors on GaN Substrate
3. Structural and Electrical Characterization of Al[sub x]Ga[sub 1−x]N/GaN Interfaces for UV Photodetectors
4. A review of GaN HEMT broadband power amplifiers
5. Leakage Current Reduction in β-Ga2O3 Schottky Barrier Diodes by CF4 Plasma Treatment
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3. Improving RF characteristic and suppress gate leakage in normally-off GaN-HEMTs using negative polarization effect and floating gate for millimeter-wave systems;Results in Physics;2024-04
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