Improving RF characteristic and suppress gate leakage in normally-off GaN-HEMTs using negative polarization effect and floating gate for millimeter-wave systems-Reference-Cited by-同舟云学术

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Improving RF characteristic and suppress gate leakage in normally-off GaN-HEMTs using negative polarization effect and floating gate for millimeter-wave systems

Published:2024-04 Issue: Volume:59 Page:107526
ISSN:2211-3797
Container-title:Results in Physics
language:en
Short-container-title:Results in Physics

Author:

Lv Ruipeng,Sun Huiqin,Yang Longfei,Liu Zhen,Zhang Yuanhao,Li Yuan,Huang Yong,Guo Zhiyou

Funder

Natural Science Foundation of Guangdong Province

South China Normal University

Guangdong Polytechnic Normal University

Special Project for Research and Development in Key areas of Guangdong Province

Publisher

Elsevier BV

Reference41 articles.

1. High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates;Dora;IEEE Electron Device Lett,2006

2. Fluorine plasma treatment for AlGaN/GaN HEMT-based ultraviolet photodetector with high responsivity and high detectivity;Zhou;IEEE Electron Device Lett,2023

3. Improved gate reliability normally-off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN cap-layer;Liu;IEEE Electron Device Lett,2021

4. Enhancement-mode AlGaN/GaN MIS-HEMTs with high VTH and high IDmax using recessed-structure with regrown AlGaN barrier;Asubar;IEEE Electron Device Lett,2020

5. Gallium nitride power devices: a state of the art review;Udabe;IEEE Access,2023

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