Gallium Nitride Power Devices: A State of the Art Review
Author:
Affiliation:
1. Electronics and Computer Science Department, University of Mondragon, Mondragon, Arrasate, Spain
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/6287639/10005208/10128694.pdf?arnumber=10128694
Reference110 articles.
1. On the Origin of the $C_{\text{oss}}$ -Losses in Soft-Switching GaN-on-Si Power HEMTs
2. An Investigation into the Causes of COSS Losses in GaN-on-Si HEMTs
3. Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN itemGaN heterostructure transistors;polyakov;Appl Phys Lett,2007
4. COSS Losses in 600 V GaN Power Semiconductors in Soft-Switched, High- and Very-High-Frequency Power Converters
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