Effect of AlN Interlayer Thickness on 2DEG Parameters in AlGaN/AlN/GaN HEMT Structures-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effect of AlN Interlayer Thickness on 2DEG Parameters in AlGaN/AlN/GaN HEMT Structures

Published:2024-06-28 Issue: Volume:8467 Page:120-125
ISSN:
Container-title:2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM)
language:
Short-container-title:

Author:

Bashkatov Dmitriy D.¹,Malin Timur V.²,Mansurov Vladimir G.²,Protasov Dmitry Yu.¹,Milakhin Denis S.¹,Zhuravlev Konstantin S.²

Affiliation:

1. Rzhanov Institute of Semiconductor Physics (ISP SB RAS) Novosibirsk State Technical University,dept. of Physics and Engineering of Semiconductor Structures,Novosibirsk,Russia

2. Rzhanov Institute of Semiconductor Physics (ISP SB RAS),dept. of Physics and Engineering of Semiconductor Structures,Novosibirsk,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10614947/10614948/10615105.pdf?arnumber=10615105

Reference30 articles.

1. 55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

2. GaN-Based RF Power Devices and Amplifiers

3. Fabrication and performance of GaN electronic devices

4. Analysis of thin AlN carrier exclusion layers in AlGaN/GaN microwave heterojunction field-effect transistors

5. Handbook of Nitride Semiconductors and Devices

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP