Growth and properties of GaAsSb/InP and GaAsSb/InAlAs superlattices on InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction
2. 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V
3. Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy
4. Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition
5. Formation of interface layers in GaxIn1−xAs/InP heterostructures: A re‐evaluation using ultrathin quantum wells as a probe
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1. Structural and electrical properties of grafted Si/GaAsSb heterojunction;Applied Physics Letters;2024-09-02
2. High electric field transport in GaAs0.51Sb0.49;Semiconductor Science and Technology;2021-03-22
3. Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting;Journal of Applied Physics;2013-10-21
4. Growth of strained GaAs1−ySby and GaAs1−y−zSbyNz quantum wells on InP substrates;Journal of Crystal Growth;2008-04
5. Characteristics of strained GaAs1−ySby (0.16 ≤ y ≤ 0.69) quantum wells on InP substrates;Journal of Physics D: Applied Physics;2007-11-30
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