Structural and electrical properties of grafted Si/GaAsSb heterojunction

Author:

Abbasi Haris Naeem1ORCID,Lee Seunghyun23ORCID,Jung Hyemin2ORCID,Gajowski Nathan2ORCID,Lu Yi1,Wang Yifan1ORCID,Kim Donghyeok1ORCID,Zhou Jie1ORCID,Gong Jiarui1ORCID,Chae Chris2,Hwang Jinwoo2ORCID,Muduli Manisha2ORCID,Nookala Subramanya1,Ma Zhenqiang1ORCID,Krishna Sanjay2ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Wisconsin-Madison 1 , Madison, Wisconsin 53706, USA

2. Department of Electrical and Computer Engineering, The Ohio State University 2 , Columbus, Ohio 43210, USA

3. Department of Electrical Engineering, The University of Texas at Arlington 3 , Arlington, Texas 76019, USA

Abstract

The short-wave infrared (SWIR) wavelength, especially 1.55 μm, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain, which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they are limited in detecting 1.55 μm light detection. This study proposes a p-type Si on n-type GaAs0.51Sb0.49 (GaAsSb) lattice matched to InP substrates heterojunction formed using a grafting technique for future GaAsSb/Si APD technology. A p+Si nanomembrane is transferred onto the GaAsSb/AlInAs/InP substrate, with an ultrathin ALD-Al2O3 oxide at the interface, which behaves as both double-side passivation and quantum tunneling layers. The devices exhibit excellent surface morphology and interface quality, confirmed by atomic force microscope and transmission electron microscope. Also, the current–voltage (I–V) of the p+Si/n−GaAsSb heterojunction shows the rectifying characteristics with an ideality factor of 1.8. The I–V tests across multiple devices confirm high consistency and yield. Furthermore, the x-ray photoelectron spectroscopy measurement reveals that GaAsSb and Si are found to have type-II band alignment with a conduction band offset of 50 meV, which is favorable for the high-bandwidth APD application. The demonstration of the GaAsSb/Si heterojunction highlights the potential to advance current SWIR PD technologies.

Funder

Defense Advanced Research Projects Agency

Air Force Research Laboratory

Intel Semiconductors Education and Research Program for Ohio

Publisher

AIP Publishing

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