Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4825220
Reference30 articles.
1. Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks
2. InP-based 2.8–3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures
3. InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs
4. Molecular-beam epitaxy of phosphor-free 1.3 μm InAlGaAs multiple-quantum-well lasers on InP (100)
5. Design and characterization of strained InGaAs/GaAsSb type-II ‘W’ quantum wells on InP substrates for mid-IR emission
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of lattice mismatch on the temperature dependence of Raman scattering in GaAsSb/InP heterostructures;J INFRARED MILLIM W;2021
2. Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors;Crystals;2017-11-02
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