Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122594
Reference15 articles.
1. InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon‐doped base grown by organometallic chemical vapor deposition
2. Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors
3. Growth and properties of GaAsSb/InGaAs superlattices on InP
4. Optical absorption of In1−xGaxAsGaSb1−yAsy superlattices
5. Conduction-band edge discontinuity of InGaAs/GaAsSb heterostructures lattice-matched to InP grown by molecular beam epitaxy
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