The 25‐Year Disruptive Path of InP/GaAsSb Double Heterojunction Bipolar Transistors
Author:
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/9781394202478.ch19
Reference30 articles.
1. Interface roughness scattering in InAs/AlSb quantum wells
2. High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers
3. Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor
4. Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors
5. Appropriately his year 2000 Nobel Prize motivation was for “for developing semiconductor heterostructures used in high‐speed‐ and opto‐electronics.”
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