Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors-Reference-Cited by-同舟云学术

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Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors

Published:1994-01 Issue:1 Volume:15 Page:16-18
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Bolognesi C.R.,Caine E.J.,Kroemer H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/7195/00289476.pdf?arnumber=289476

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4. Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy;Applied Physics Letters;2014-02-03

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