InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5V<sub>ppd</sub>-Swing PAM-4 DAC-Driver-Reference-Cited by-同舟云学术

InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5V_ppd-Swing PAM-4 DAC-Driver

Published:2022-10-16 Issue: Volume: Page:
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Container-title:2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Bolognesi C. R.¹,Arabhavi A. M.¹,Hersent R.²,Hamzeloui S.¹,Jorge F.²,Wen X.³,Riet M.²,Luisier M.³,Nodjiadjim V.²,Ciabattini F.¹,Mismer C.²,Ostinelli O.¹,Konczykowska A.²

Affiliation:

1. ETH-Zürich,Millimeter-Wave Electronics Group (MWE)

2. Thales Research and Technology and CEA-LETI,III-V Lab, Joint lab: Nokia Bell Labs,France

3. ETH-Zürich,Integrated Systems Laboratory (IIS)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051763.pdf?arnumber=10051763

Reference34 articles.

1. Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

2. 130nm InP DHBTs with ft >0.52THz and fmax >1.1THz

3. SiGe HBT with fx/fmax of 505 GHz/720 GHz;heinemann;2016 IEEE Int Electron Dev Meeting (IEDM),2016

4. A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology

5. First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

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5. Contactless measurement of minority carrier lifetime and background carrier concentration in unintentionally doped GaAsSb for short-wave infrared detection;AIP Advances;2023-08-01