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Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

  • Published:2015-06 Issue:6 Volume:36 Page:549-551
  • ISSN:0741-3106
  • Container-title:IEEE Electron Device Letters
  • language:
  • Short-container-title:IEEE Electron Device Lett.

Author:

Tang Yan,Shinohara Keisuke,Regan Dean,Corrion Andrea,Brown David,Wong Joel,Schmitz Adele,Fung Helen,Kim Samuel,Micovic Miroslav

Funder

Defense Advanced Research Projects Agency (DARPA)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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