Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz-Reference-Cited by-同舟云学术

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Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

Published:2015-06 Issue:6 Volume:36 Page:549-551
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tang Yan,Shinohara Keisuke,Regan Dean,Corrion Andrea,Brown David,Wong Joel,Schmitz Adele,Fung Helen,Kim Samuel,Micovic Miroslav

Funder

Defense Advanced Research Projects Agency (DARPA)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7110646/07086311.pdf?arnumber=7086311

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