Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz-Reference-Cited by-同舟云学术

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Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz

Published:2023-10-16 Issue: Volume: Page:
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Container-title:2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Hamzeloui Sara¹,Arabhavi Akshay M.¹,Ciabattini Filippo¹,Ebrahimi Mojtaba¹,Müller Markus²,Ostinelli Olivier¹,Schröter Michael²,Bolognesi Colombo R.¹

Affiliation:

1. Millimeter-Wave Electronics (MWE) Group, ETH Zurich,Switzerland

2. TU Dresden,Chair for Electron Devices and Integrated Circuits (CEDIC),Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10310176/10310665/10310957.pdf?arnumber=10310957

Reference17 articles.

1. An efficient W-band InP DHBT digital power amplifier

2. A 200 mW InP DHBT W-band power amplifier in transferred-substrate technology with integrated diamond heat spreader

3. 80–110-GHz Broadband Linear PA With 33% Peak PAE and Comparison of Stacked Common Base and Common Emitter PA in InP

4. W-Band InP HBT Power Amplifiers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs;IEEE Microwave and Wireless Technology Letters;2024-08

2. G-Band Load-Pull Characterization of High-Efficiency Emitter-Fin InP/GaAsSb DHBTs;2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM);2024-05-20

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