G-Band Load-Pull Characterization of High-Efficiency Emitter-Fin InP/GaAsSb DHBTs-Reference-Cited by-同舟云学术

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G-Band Load-Pull Characterization of High-Efficiency Emitter-Fin InP/GaAsSb DHBTs

Published:2024-05-20 Issue: Volume: Page:297-299
ISSN:
Container-title:2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM)
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Author:

Ciabattini Filippo¹,Hamzeloui Sara¹,Arabhavi Akshay M.¹,Ebrahimi Mojtaba¹,Ostinelli Olivier¹,Bolognesi Colombo R.¹

Affiliation:

1. D-ITET-ETHZ, Millimeter-Wave Electronics Group,Zürich,Switzerland

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10552866/10552920/10553147.pdf?arnumber=10553147

Reference10 articles.

1. InGaP/GaAsSb/InGaAsSb/InP Double Heterojunction Bipolar Transistors With Record f t of 813 GHz

2. InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

3. THz InP/GaAsSb DHBTs with Record f_AVG ⁼800 GHz: Characterization to 330 GHz

4. High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz

5. Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz

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