W-Band InP HBT Power Amplifiers
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/8024095/08010276.pdf?arnumber=8010276
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Catalyzing satellite communication: A 20W Ku-Band RF front-end power amplifier design and deployment;PLOS ONE;2024-04-10
2. Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
3. A 7–115-GHz Distributed Amplifier With 24-dBm Output Power Using Quadruple-Stacked HBT in InP;IEEE Microwave and Wireless Technology Letters;2023-06
4. A Wideband Gain-Enhancement Technique for Distributed Amplifiers;IEEE Transactions on Microwave Theory and Techniques;2020-09
5. A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers;IEEE Transactions on Microwave Theory and Techniques;2020-07
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