Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123044
Reference18 articles.
1. Back‐surface emitting GaAsxSb1−xLED’s (λ=1.0 μm) prepared by molecular‐beam epitaxy
2. Low‐threshold room‐temperature double‐heterostructure GaAs1−xSbx/AlyGa1−yAs1−xSbxinjection lasers at 1‐μm wavelengths
3. High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5 [micro sign]m surface emitting lasers
4. Organometallic vapor phase epitaxial growth of GaAs0.5Sb0.5
5. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
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