Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates-Reference-Cited by-同舟云学术

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Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates

Published:2021-02 Issue: Volume:555 Page:125970
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mitsuhara M.,Gotow T.,Hoshi T.,Sugiyama H.,Takenaka M.,Takagi S.

Funder

Japan Science and Technology Agency

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference45 articles.

1. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

2. Tunneling MOSFET technologies using III-V/Ge materials;Takagi,2016

3. InGaAs Tunneling Field-Effect-Transistors With Atomic-Layer-Deposited Gate Oxides

4. High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extended emission wavelength beyond 2.2 μ m in strained multiple-quantum-well laser using InGaAsSb material grown on InP substrate;Applied Physics Letters;2023-04-03

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