Extended emission wavelength beyond 2.2 μ m in strained multiple-quantum-well laser using InGaAsSb material grown on InP substrate

Abstract

We report on the growth and lasing characteristics of 2.3%-compressive-strained InGaAsSb multiple-quantum-well (MQW) lasers on InP substrates with emission wavelengths near 2.2 μm. MQW structures with four wells were grown by metalorganic molecular beam epitaxy at 500 °C. X-ray diffraction and photoluminescence results showed that the InGaAsSb well layers were grown with the assistance of the Sb surfactant effect. The emission wavelengths of the MQW lasers with well thicknesses of 6.4 and 8.4 nm were 2.190 and 2.278 μm, respectively. For the MQW laser with the well thickness of 8.4 nm, the threshold current under continuous-wave operation was 22 mA at 15 °C, and the characteristic temperature was estimated to be 53 K in the temperature region from 15 to 35 °C and 42 K in the region from 35 to 55 °C. The laser with the 8.4-nm-thick well had an emission wavelength about 90 nm longer than that of the one with the 6.4-nm-thick well, but the lasing characteristics of the two were comparable.